Paper Title:
The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
  Abstract

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Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
1491-1494
DOI
10.4028/www.scientific.net/MSF.105-110.1491
Citation
L. Wei, J.L. Lee, S. Tanigawa, T. Nakagawa, K. Ohta, "The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons ", Materials Science Forum, Vols. 105-110, pp. 1491-1494, 1992
Online since
January 1992
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