Depth Profiling of Defects in Low Temperature MBE-Grown Silicon |
| Journal |
Materials Science Forum (Volumes 105 - 110) |
| Volume |
Positron Annihilation - ICPA-9 |
| Edited by |
Zs. Kajcsos and Cs. Szeles |
| Pages |
301-308 |
| DOI |
10.4028/www.scientific.net/MSF.105-110.301 |
| Citation |
T.E. Jackman et al., 1992, Materials Science Forum, 105-110, 301 |
| Authors |
T.E. Jackman, G.C. Aers, J.P. McCaffrey, D.T. Britton, P. Willutzki, P.J. Simpson, P.J. Schultz, Peter Mascher |
| Keywords |
Defect Profiling, Doppler Broadening, Lifetime, MBE, Positron Beam, Silicon |
| Full Paper |
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