Vacancies in II-VI- and IV-VI Compound Semiconductors Studied by Positron Lifetime Spectroscopy |
| Journal |
Materials Science Forum (Volumes 105 - 110) |
| Volume |
Positron Annihilation - ICPA-9 |
| Edited by |
Zs. Kajcsos and Cs. Szeles |
| Pages |
333-340 |
| DOI |
10.4028/www.scientific.net/MSF.105-110.333 |
| Citation |
R. Krause et al., 1992, Materials Science Forum, 105-110, 333 |
| Authors |
R. Krause, M. Neubert, Th. Drost, W. Hörstel, A. Polity, F.M. Kiessling, U. Paitz, V.P. Zlomanov, S. Mäkinen |
| Keywords |
CdHgTe, Compound Semiconductor, PbSe, Specific Positron Trapping Rates |
| Full Paper |
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