Positron Mobility and Trapping in Semiconductors |
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| Journal | Materials Science Forum (Volumes 105 - 110) |
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| Volume | Positron Annihilation - ICPA-9 |
| Edited by | Zs. Kajcsos and Cs. Szeles |
| Pages | 369-376 |
| DOI | 10.4028/www.scientific.net/MSF.105-110.369 |
| Citation | J. Mäkinen, 1992, Materials Science Forum, 105-110, 369 |
| Authors | J. Mäkinen |
| Keywords | Mobility in Si, Trapping in Si, Vacancy Relaxation |
| Full Paper | 
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