Paper Title:
Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 105-110)
Edited by
Zs. Kajcsos and Cs. Szeles
Pages
929-932
DOI
10.4028/www.scientific.net/MSF.105-110.929
Citation
J.M. Clayton, H.M. Fretwell, S.G. Usmar, A. Alam, D.T.J. Hurle, "Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs", Materials Science Forum, Vols. 105-110, pp. 929-932, 1992
Online since
January 1992
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