Positron Trapping Model in N-Type Semiconductors with Vacancies |
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| Journal | Materials Science Forum (Volumes 105 - 110) |
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| Volume | Positron Annihilation - ICPA-9 |
| Edited by | Zs. Kajcsos and Cs. Szeles |
| Pages | 985-988 |
| DOI | 10.4028/www.scientific.net/MSF.105-110.985 |
| Citation | Masao Doyama, 1992, Materials Science Forum, 105-110, 985 |
| Authors | Masao Doyama |
| Keywords | Charged Vacancies, P-Type Semiconductors, Semiconductor, Trapping, Vacancy |
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