Paper Title:
Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
153-158
DOI
10.4028/www.scientific.net/MSF.117-118.153
Citation
K. Gotoh, J. Murota, S. Ono, "Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition ", Materials Science Forum, Vols. 117-118, pp. 153-158, 1993
Online since
January 1993
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