Paper Title:

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Periodical Materials Science Forum (Volumes 117 - 118)
Main Theme Shallow Impurities in Semiconductors V
Edited by Tsunemasa Taguchi
Pages 189-194
DOI 10.4028/www.scientific.net/MSF.117-118.189
Citation E. Iino et al., 1993, Materials Science Forum, 117-118, 189
Authors E. Iino, I. Fusegawa, H. Yamagishi
Keywords Czochralski Silicon, Micro-FTIR, Oxygen, Striations
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