Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
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| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 201-206 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.201 |
| Citation | Y. Shirakawa et al., 1993, Materials Science Forum, 117-118, 201 |
| Authors | Y. Shirakawa, Hiroshi Yamada Kaneta, Tomoya Ogawa |
| Keywords | Carbon, Complex Defect, Infrared Absorption, Oxygen |
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