Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
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| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 207-212 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.207 |
| Citation | Hiroshi Yamada Kaneta et al., 1993, Materials Science Forum, 117-118, 207 |
| Authors | Hiroshi Yamada Kaneta, Ch. Kaneta, Tomoya Ogawa |
| Keywords | Germanium, Infrared Absorption, Oxygen, Silicon |
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