Paper Title:
Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
207-212
DOI
10.4028/www.scientific.net/MSF.117-118.207
Citation
H. Yamada-Kaneta, C. Kaneta, T. Ogawa, "Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping ", Materials Science Forum, Vols. 117-118, pp. 207-212, 1993
Online since
January 1993
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