Characterization of Excimer Laser Annealing of Arsenic Implanted Silicon |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
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| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 237-242 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.237 |
| Citation | T. Akane et al., 1993, Materials Science Forum, 117-118, 237 |
| Authors | T. Akane, S. Matsumoto, I. Mizushima |
| Keywords | ArF Excimer Laser Annealing, As in Si, Deactivation, RBS |
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