Paper Title:
Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs)
  Abstract

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Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
243-248
DOI
10.4028/www.scientific.net/MSF.117-118.243
Citation
S. F. Chichibu, T. Nii, T. Akane, S. Matsumoto, "Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs) ", Materials Science Forum, Vols. 117-118, pp. 243-248, 1993
Online since
January 1993
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