Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs) |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
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| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 243-248 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.243 |
| Citation | Shigefusa F. Chichibu et al., 1993, Materials Science Forum, 117-118, 243 |
| Authors | Shigefusa F. Chichibu, T. Nii, T. Akane, S. Matsumoto |
| Keywords | Diffusion Coefficient, Laser Doping, tBAs |
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