Paper Title:
Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells
  Abstract

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Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
285-290
DOI
10.4028/www.scientific.net/MSF.117-118.285
Citation
C.I. Harris, B. Monemar, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard, "Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells ", Materials Science Forum, Vols. 117-118, pp. 285-290, 1993
Online since
January 1993
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