Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells |
| Journal |
Materials Science Forum (Volumes 117 - 118) |
| Volume |
Shallow Impurities in Semiconductors V |
| Edited by |
Tsunemasa Taguchi |
| Pages |
285-290 |
| DOI |
10.4028/www.scientific.net/MSF.117-118.285 |
| Citation |
C.I. Harris et al., 1993, Materials Science Forum, 117-118, 285 |
| Authors |
C.I. Harris, Bo Monemar, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard |
| Keywords |
Binding Energy, Exciton, Localization |
| Full Paper |
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