Paper Title:
Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
291-296
DOI
10.4028/www.scientific.net/MSF.117-118.291
Citation
K. Ikuta, H. Yokoyama, N. Inoue, "Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy ", Materials Science Forum, Vols. 117-118, pp. 291-296, 1993
Online since
January 1993
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.