Paper Title:
Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
315-320
DOI
10.4028/www.scientific.net/MSF.117-118.315
Citation
S. F. Chichibu, A. Iwai, Y. Nakahara, S. Matsumoto, H. Higuchi, L. Wei, S. Tanigawa, "Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine ", Materials Science Forum, Vols. 117-118, pp. 315-320, 1993
Online since
January 1993
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Price
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