Paper Title:

Extremely Heavy Doping of Carbon in GaAs and InGaAs

Periodical Materials Science Forum (Volumes 117 - 118)
Main Theme Shallow Impurities in Semiconductors V
Edited by Tsunemasa Taguchi
Pages 37-44
DOI 10.4028/www.scientific.net/MSF.117-118.37
Citation Makoto Konagai, 1993, Materials Science Forum, 117-118, 37
Authors Makoto Konagai
Keywords Acceptor, Carbon, GaAs, Heavy Doping, InGaAs
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