Extremely Heavy Doping of Carbon in GaAs and InGaAs |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
|---|---|
| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 37-44 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.37 |
| Citation | Makoto Konagai, 1993, Materials Science Forum, 117-118, 37 |
| Authors | Makoto Konagai |
| Keywords | Acceptor, Carbon, GaAs, Heavy Doping, InGaAs |
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