Paper Title:
Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
387-392
DOI
10.4028/www.scientific.net/MSF.117-118.387
Citation
L. Pavesi, I. Harrison, F. Piazza, M. Henini, "Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations ", Materials Science Forum, Vols. 117-118, pp. 387-392, 1993
Online since
January 1993
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Price
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