Paper Title:
Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
399-404
DOI
10.4028/www.scientific.net/MSF.117-118.399
Citation
H.-M. You, U.M. Gösele, T.Y. Tan, "Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs ", Materials Science Forum, Vols. 117-118, pp. 399-404, 1993
Online since
January 1993
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