Paper Title:
Electron Beam Doping of Si and Zn Impurities into GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
423-428
DOI
10.4028/www.scientific.net/MSF.117-118.423
Citation
T. Wada, M. Takeda, A. Takeda, "Electron Beam Doping of Si and Zn Impurities into GaAs ", Materials Science Forum, Vols. 117-118, pp. 423-428, 1993
Online since
January 1993
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Price
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