Paper Title:
Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure
  Abstract

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Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
447-452
DOI
10.4028/www.scientific.net/MSF.117-118.447
Citation
K. Takarabe, H. Ashizawa, S. Minomura, H. Kato, Y. Watanabe, K. Matsuda, "Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure ", Materials Science Forum, Vols. 117-118, pp. 447-452, 1993
Online since
January 1993
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