Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC |
| Journal |
Materials Science Forum (Volumes 117 - 118) |
| Volume |
Shallow Impurities in Semiconductors V |
| Edited by |
Tsunemasa Taguchi |
| Pages |
495-500 |
| DOI |
10.4028/www.scientific.net/MSF.117-118.495 |
| Citation |
W. Götz et al., 1993, Materials Science Forum, 117-118, 495 |
| Authors |
W. Götz, Adolf Schöner, Gerhard Pensl, W. Suttrop, Wolfgang J. Choyke, René A. Stein, S. Leibenzeder |
| Keywords |
Donors, Impurity |
| Full Paper |
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