Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
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| Volume | Shallow Impurities in Semiconductors V |
| Pages | 495-500 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.495 |
| Authors | W. Götz, Adolf Schöner, Gerhard Pensl, W. Suttrop, W.J. Choyke, René A. Stein, S. Leibenzeder |
| Keywords | Donors, Impurity |
| Full Paper | 
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