Paper Title:
Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons
  Abstract

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Periodical
Materials Science Forum (Volumes 117-118)
Edited by
Tsunemasa Taguchi
Pages
501-506
DOI
10.4028/www.scientific.net/MSF.117-118.501
Citation
H. Itho, M. Yoshikawa, I. Nashiyama, L. Wei, S. Tanigawa, S. Misawa, H. Okumura, S. Yoshida, "Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons", Materials Science Forum, Vols. 117-118, pp. 501-506, 1993
Online since
January 1993
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