Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
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| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 53-60 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.53 |
| Citation | U.M. Gösele et al., 1993, Materials Science Forum, 117-118, 53 |
| Authors | U.M. Gösele, T.Y. Tan, M. Uematsu, K. Wada |
| Keywords | GaAs, Intrinsic Point Defects (IPD), Non-Equilibrium Concentration |
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