Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties |
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| Journal | Materials Science Forum (Volumes 117 - 118) |
|---|---|
| Volume | Shallow Impurities in Semiconductors V |
| Edited by | Tsunemasa Taguchi |
| Pages | 67-74 |
| DOI | 10.4028/www.scientific.net/MSF.117-118.67 |
| Citation | J.L. Lee, 1993, Materials Science Forum, 117-118, 67 |
| Authors | J.L. Lee |
| Keywords | Impurities, Positrons, Vacancy |
| Full Paper | 
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