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Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties , p.67
Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon , p.75
Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon , p.81
Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study - , p.87
Spherical Model of Shallow Acceptor Resonant P_1/2 States in Cubic Semiconductors , p.93
Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells , p.99
Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys , p.105
Isotopic Dependence of Near-Band-Gap Luminescence from Germanium , p.111
Neutron Transmutation Doping of Isotopically Controlled Ge , p.117

Home > Materials Science Forum > Shallow Impurities in Semiconductors V > Spherical Model of Shallow Acceptor Resonant...

Paper Title:

Spherical Model of Shallow Acceptor Resonant P_1/2 States in Cubic Semiconductors

Periodical	Materials Science Forum (Volumes 117 - 118)
Main Theme	Shallow Impurities in Semiconductors V
Edited by	Tsunemasa Taguchi
Pages	93-98
DOI	10.4028/www.scientific.net/MSF.117-118.93
Citation	Ryszard Buczko, 1993, Materials Science Forum, 117-118, 93
Authors	Ryszard Buczko
Keywords	Acceptor, Resonant States, Shallow Impuriteis
Price	US$ 28,-

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