Paper Title:
Copper Precipitation at the Silicon/Silicon Dioxide Interface: Microstructure and Electrical Properties
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 126-128)
Edited by
Ph. Komninou and A. Rocher
Pages
591-594
DOI
10.4028/www.scientific.net/MSF.126-128.591
Citation
A. Correia, D. Ballutaud, J.L. Maurice, "Copper Precipitation at the Silicon/Silicon Dioxide Interface: Microstructure and Electrical Properties", Materials Science Forum, Vols. 126-128, pp. 591-594, 1993
Online since
January 1993
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Price
$32.00
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