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Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors

Journal Materials Science Forum (Volumes 126 - 128)
Volume Intergranular and Interphase Boundaries in Materials
Edited by Ph. Komninou and A. Rocher
Pages 81-84
DOI 10.4028/www.scientific.net/MSF.126-128.81
Citation Masanori Kohyama et al., 1993, Materials Science Forum, 126-128, 81
Authors Masanori Kohyama, S. Kose, Ryoichi Yamamoto
Keywords {122 }Ʃ=9 Boundary, {211 }Ʃ=3 Boundary, Atomic Structure, Chemical Potential, Compound Semiconductor, Electronic Structures, Non-Polar Interfaces, Polar Interfaces, Ʃ=9 Boundary, Self-Consistent Tight-Binding Method, Silicon Carbide (SiC), Stoichiometry, Symmetrical Tilt Grain Boundary, Thermodynamic Potential, Wrong Bond, Zinc Blende Structure
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