Paper Title:
The Bound Exciton Model for Isoelectronic Centers in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
105-110
DOI
10.4028/www.scientific.net/MSF.143-147.105
Citation
G. Davies, M. H. Nazaré, "The Bound Exciton Model for Isoelectronic Centers in Silicon", Materials Science Forum, Vols. 143-147, pp. 105-110, 1994
Online since
October 1993
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