Paper Title:
Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
1099-1104
DOI
10.4028/www.scientific.net/MSF.143-147.1099
Citation
R. Krause-Rehberg, A. Polity, T. Drost, G. Roos, G. Pensl, D. Volm, B.K. Meyer, "Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy ", Materials Science Forum, Vols. 143-147, pp. 1099-1104, 1994
Online since
October 1993
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.