Paper Title:
Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?
  Abstract

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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
1161-1166
DOI
10.4028/www.scientific.net/MSF.143-147.1161
Citation
B. Goutiers, L. Dmowski, U. Willke, J.J. Harris, M. Rabary, J. C. Portal, "Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?", Materials Science Forum, Vols. 143-147, pp. 1161-1166, 1994
Online since
October 1993
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