Paper Title:
Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence
  Abstract

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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
135-140
DOI
10.4028/www.scientific.net/MSF.143-147.135
Citation
H.-P. Frank, E. Diehl, K.-H. Ergezinger, B. Fischer, B. Ittermann, F. Mai, K. Marbach, S. Weißenmayer, G. Welker, H. Ackermann, H.J. Stöckmann, "Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence ", Materials Science Forum, Vols. 143-147, pp. 135-140, 1994
Online since
October 1993
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