Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence |
| Journal |
Materials Science Forum (Volumes 143 - 147) |
| Volume |
Defects in Semiconductors 17 |
| Edited by |
Helmut Heinrich and Wolfgang Jantsch |
| Pages |
135-140 |
| DOI |
10.4028/www.scientific.net/MSF.143-147.135 |
| Citation |
H.-P. Frank et al., 1993, Materials Science Forum, 143-147, 135 |
| Authors |
H.-P. Frank, E. Diehl, K..-H. Ergezinger, Bernd Fischer, Bernd Ittermann, F. Mai, K. Marbach, S. Weißenmayer, G. Welker, H. Ackermann, H.J. Stöckmann |
| Keywords |
Diffusion, Lattice Location, Low-Dose Implantation, Point Defect |
| Full Paper |
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