Paper Title:
Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
  Abstract

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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
1387-1390
DOI
10.4028/www.scientific.net/MSF.143-147.1387
Citation
M. Ivanda, U.V. Desnica, T.E. Haynes, "Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate", Materials Science Forum, Vols. 143-147, pp. 1387-1390, 1994
Online since
October 1993
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