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The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon

Journal Materials Science Forum (Volumes 143 - 147)
Volume Defects in Semiconductors 17
Edited by Helmut Heinrich and Wolfgang Jantsch
Pages 1463-1468
DOI 10.4028/www.scientific.net/MSF.143-147.1463
Citation Christian Delerue et al., 1993, Materials Science Forum, 143-147, 1463
Authors Christian Delerue, Michel Lannoo, G. Allan
Keywords Dangling Bond, Luminescence, Porous Silicon (PS)
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