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On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon

Journal Materials Science Forum (Volumes 143 - 147)
Volume Defects in Semiconductors 17
Edited by Helmut Heinrich and Wolfgang Jantsch
Pages 1529-1534
DOI 10.4028/www.scientific.net/MSF.143-147.1529
Citation Manfred Reiche, 1993, Materials Science Forum, 143-147, 1529
Authors Manfred Reiche
Keywords Metal Impurities, Precipitation, Process-Induced Defects
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