Paper Title:
The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
1595-1598
DOI
10.4028/www.scientific.net/MSF.143-147.1595
Citation
V.G. Antipov, R.N. Kutt, S.A. Nikishin, S.S. Ruvimov, L.M. Sorokin, M.V. Stepanov, "The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates", Materials Science Forum, Vols. 143-147, pp. 1595-1598, 1994
Online since
October 1993
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.