Paper Title:
Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As
  Abstract

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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
289-294
DOI
10.4028/www.scientific.net/MSF.143-147.289
Citation
A.C. Irvine, D.W. Palmer, J.S. Roberts, "Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As", Materials Science Forum, Vols. 143-147, pp. 289-294, 1994
Online since
October 1993
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