Paper Title:
Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation
  Abstract

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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
507-512
DOI
10.4028/www.scientific.net/MSF.143-147.507
Citation
R.G. Elliman, W.C. Wong, "Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation", Materials Science Forum, Vols. 143-147, pp. 507-512, 1994
Online since
October 1993
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