Paper Title:
Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
641-646
DOI
10.4028/www.scientific.net/MSF.143-147.641
Citation
G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler, "Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells", Materials Science Forum, Vols. 143-147, pp. 641-646, 1994
Online since
October 1993
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.