Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC) |
| Journal |
Materials Science Forum (Volumes 143 - 147) |
| Volume |
Defects in Semiconductors 17 |
| Edited by |
Helmut Heinrich and Wolfgang Jantsch |
| Pages |
69-74 |
| DOI |
10.4028/www.scientific.net/MSF.143-147.69 |
| Citation |
W. Götz et al., 1993, Materials Science Forum, 143-147, 69 |
| Authors |
W. Götz, Adolf Schöner, W. Suttrop, Gerhard Pensl, Wolfgang J. Choyke, R. Steiner, S. Leibenzeder |
| Keywords |
Aluminum Acceptors, EMA, Nitrogen Donor, Silicon Carbide (SiC), Vibrational Mode |
| Full Paper |
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