Paper Title:
Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
767-772
DOI
10.4028/www.scientific.net/MSF.143-147.767
Citation
A. I. Ryskin, "Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor", Materials Science Forum, Vols. 143-147, pp. 767-772, 1994
Online since
October 1993
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