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Boron in Cubic Silicon Carbide: Dynamic Effects in ESR

Journal Materials Science Forum (Volumes 143 - 147)
Volume Defects in Semiconductors 17
Edited by Helmut Heinrich and Wolfgang Jantsch
Pages 81-86
DOI 10.4028/www.scientific.net/MSF.143-147.81
Authors V. Bratus, N.P. Baran, V.M. Maksimenko, T. Petrenko, V. Romanenko
Keywords Boron Defect, Electron Spin Resonance, Reorientation, Silicon Carbide (SiC)
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