ODMR Studies of MOVPE-Grown GaN Epitaxial Layers |
| Journal |
Materials Science Forum (Volumes 143 - 147) |
| Volume |
Defects in Semiconductors 17 |
| Edited by |
Helmut Heinrich and Wolfgang Jantsch |
| Pages |
87-92 |
| DOI |
10.4028/www.scientific.net/MSF.143-147.87 |
| Citation |
M. Kunzer et al., 1993, Materials Science Forum, 143-147, 87 |
| Authors |
M. Kunzer, Ulrich Kaufmann, Karin Maier, J. Schneider, N. Herres, Isamu Akasaki, Hiroshi Amano |
| Keywords |
Galium Nitride (GaN), MOVPE, ODMR, Photoluminescence (PL) |
| Full Paper |
Get the full paper by clicking here
|
