ODMR Studies of MOVPE-Grown GaN Epitaxial Layers |
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| Journal | Materials Science Forum (Volumes 143 - 147) |
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| Volume | Defects in Semiconductors 17 |
| Edited by | Helmut Heinrich and Wolfgang Jantsch |
| Pages | 87-92 |
| DOI | 10.4028/www.scientific.net/MSF.143-147.87 |
| Authors | M. Kunzer, Ulrich Kaufmann, Karin Maier, J. Schneider, N. Herres, Isamu Akasaki, Hiroshi Amano |
| Keywords | Galium Nitride (GaN), MOVPE, ODMR, Photoluminescence |
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