Paper Title:
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
951-956
DOI
10.4028/www.scientific.net/MSF.143-147.951
Citation
B. Machayekhi, R. Rahbi, B. Theys, M. Miloche, J. Chevallier, "Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling ", Materials Science Forum, Vols. 143-147, pp. 951-956, 1994
Online since
October 1993
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