Paper Title:
The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
  Abstract

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Periodical
Materials Science Forum (Volumes 143-147)
Edited by
Helmut Heinrich and Wolfgang Jantsch
Pages
963-968
DOI
10.4028/www.scientific.net/MSF.143-147.963
Citation
S.A. McQuaid, C. A. Londos, M.J. Binns, R.C. Newman, J.H. Tucker, "The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C", Materials Science Forum, Vols. 143-147, pp. 963-968, 1994
Online since
October 1993
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