HOME CONTACT My eBook

Username: Password:

> @scientific.net

Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

• Papers
• Abstracts
• buy eBook

• p189 Detection of Defects Responsible for Lifetime in p-Type Si   [ 150 K ]
  Authors: M. Zazoui, J.C. Bourgoin, D. Stiévenard, D. Deresmes
• p195 Spin Dependent Photoconductivity in Silicon-on-Sapphire   [ 290 K ]
  Authors: R.C. Barklie, C. O'Raifeartaigh, L. Bradley, A.M. Hodge
• p201 Group-V Antisite Defects, V_Ga , in GaAs   [ 548 K ]
  Authors: Ulrich Kaufmann
• p211 Electronic Structure of P_In Antisite in InP   [ 251 K ]
  Authors: W.M. Chen, P. Dreszer, R.P. Leon, Eicke R. Weber, E. Sörman, Bo Monemar, B.W. Liang, C.W. Tu
• p217 On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance   [ 306 K ]
  Authors: Johann Martin Spaeth, K. Krambrock, M. Hesse
• p223 The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model   [ 315 K ]
  Authors: Hans Jürgen von Bardeleben, Christian Delerue, D. Stiévenard
• p229 The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers   [ 243 K ]
  Authors: R.C. Newman, B.R. Davidson, R. Addinall, R. Murray, J.W. Emmert, J. Wagner, W. Götz, G. Roos, Gerhard Pensl
• p235 Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide   [ 260 K ]
  Authors: Aldo Amore Bonapasta
• p241 Incorporation of Be Into In_x Ga_1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes   [ 232 K ]
  Authors: A.L. Alvarez, J. Wagner, F. Calle, Manfred Maier, G. Gutierrez, A. Sacedon, Enrique Calleja, Elias Muñoz Merino
• p247 Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C   [ 291 K ]
  Authors: B.R. Davidson, R.C. Newman, R.E. Pritchard, D.A. Robbie, M.J.L. Sangster, J. Wagner, A. Fischer, K. Ploog
• p253 Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide   [ 252 K ]
  Authors: R. Jones, Sven Öberg
• p259 Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy   [ 240 K ]
  Authors: J. Wagner, M. Ramsteiner, M.J. Ashwin, M.R. Fahy, R.C. Newman, W. Braun, K. Ploog
• p265 Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs   [ 238 K ]
  Authors: M.J. Ashwin, R. Addinall, M.R. Fahy, R.C. Newman, I. Silier, E. Bauser
• p271 The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP   [ 215 K ]
  Authors: G. Weyer, P. Kringhøj, Kristian Freitag
• p277 Nitrogen-Hydrogen Complexes in GaP and GaAs   [ 267 K ]
  Authors: W.S. Hahn, B. Clerjaud, D. Côte, F. Gendron, C. Porte, W. Ulrici, Dariusz Wasik, W. Wilkening