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Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

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• p561 Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements   [ 284 K ]
  Authors: W. Plotz, V. Holy, W.V.D. Hoogenhof, W. Ahrer, N. Frank, C. Schiller, K. Lischka
• p567 Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM   [ 505 K ]
  Authors: A. Rosenauer, H. Stanzl, K. Wolf, S. Bauer, M. Kastner, M. Grün, W. Gebhardt
• p573 Coulomb Energy of Traps in Semiconductor Space Charge Regions   [ 264 K ]
  Authors: M. Schulz
• p579 Effect of Interface on Capture and Emission Processes via Deep Centers   [ 129 K ]
  Authors: I.N. Yassievich, A.A. Pakhomov
• p583 Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface   [ 396 K ]
  Authors: T. Kovyazina, A. Kutas, V. Khitko, P. Gaiduk, F. Komarov, V. Solov'ev, V. Bondarenko, G. Troyanova
• p587 Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset   [ 224 K ]
  Authors: D. Stiévenard, X. Letartre, Michel Lannoo, S. Ababou, Gérard Guillot
• p593 Impurity-Enhanced Disordering in Superlattices   [ 358 K ]
  Authors: J. Bernholc, B. Chen, Q. Zhang, C. Wang, B. Yakobson
• p599 Exciton Spectroscopy of Near-Surface GaAs/Al_0.3Ga_0.7As Quantum Wells - The New Method of Band Bending Investigation   [ 297 K ]
  Authors: V.N. Astratov, Yu. A. Vlasov
• p605 Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells   [ 277 K ]
  Authors: A. Kozanecki, W.P. Gillin, Brian J. Sealy, K.E. Singer
• p611 Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga_1-xAl_xSb/InAs/Ga_1-xAl_xSb Single Quantum Wells   [ 232 K ]
  Authors: Hans Jürgen von Bardeleben, M.O. Manasreh, C.E. Stutz
• p617 Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures   [ 275 K ]
  Authors: P. Wiśniewski, T. Suski, L.H. Dmowski, I. Gorczyca, P. Sobkowicz, J. Smoliner, E. Gornik, G. Böhm, G. Weimann
• p623 DX Centers in Reduced Dimensionality n-Type AlGaAs Structures   [ 242 K ]
  Authors: Ignacio Izpura, Elias Muñoz Merino, Enrique Calleja, F. Garcia
• p629 Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells   [ 261 K ]
  Authors: J. Peber Bergman, P.O. Holtz, Bo Monemar, M. Sundaram, J.L. Merz, A.C. Gossard
• p635 Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces   [ 278 K ]
  Authors: J.R. Botha, A.W.R. Leitch
• p641 Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells   [ 310 K ]
  Authors: G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler