Plasma Passivation of III-V Semiconductor Surfaces |
| Journal |
Materials Science Forum (Volumes 148 - 149) |
| Volume |
Hydrogen in Compound Semiconductors |
| Edited by |
S.J. Pearton |
| Pages |
159-188 |
| DOI |
10.4028/www.scientific.net/MSF.148-149.159 |
| Citation |
E.S. Aydil et al., 1993, Materials Science Forum, 148-149, 159 |
| Authors |
E.S. Aydil, R.A. Gottscho |
| Keywords |
Clustered-Dry Processing, Fermi Level Pinning, GaAs, GaSb, H2 Plasma, Herojunction Bipolar Transistor (HBT), Infrared Spectroscopy, InP, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MISFET, N2 Plasma, Native Oxide, NH3 Plasma, Photoluminescence (PL), Reflection, Stability, Surface Characterization, Surface Passivation, Surface States |
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