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Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors

Journal Materials Science Forum (Volumes 148 - 149)
Volume Hydrogen in Compound Semiconductors
Edited by S.J. Pearton
Pages 321-348
DOI 10.4028/www.scientific.net/MSF.148-149.321
Citation B. Pajot, 1993, Materials Science Forum, 148-149, 321
Authors B. Pajot
Keywords Dopant Passivation, Dopant-Hydrogen Complexes, Proton Implantation, Semiconducting Compounds
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