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Hydrogen in III-V Compound Semiconductors

Journal Materials Science Forum (Volumes 148 - 149)
Volume Hydrogen in Compound Semiconductors
Edited by S.J. Pearton
Pages 393-480
DOI 10.4028/www.scientific.net/MSF.148-149.393
Citation S.J. Pearton, 1993, Materials Science Forum, 148-149, 393
Authors S.J. Pearton
Keywords CH4/H2, Cleaning, Deep Level, Dopant Passivation, Dry Etching, ECR, GaAs, Growth, HBr/H2, Hl/H2, Hydrogen, InGaAs, InP, Process, Wet Etching
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