TEM and In Situ HREM for Studying Metal-Semiconductor Interfacial Reactions |
| Journal |
Materials Science Forum (Volumes 155 - 156) |
| Volume |
Reactive Phase Formation at Interfaces and Diffusion Processes |
| Edited by |
Y. Limoge and J.L. Bocquet |
| Pages |
111-120 |
| DOI |
10.4028/www.scientific.net/MSF.155-156.111 |
| Citation |
R. Sinclair et al., 1994, Materials Science Forum, 155-156, 111 |
| Authors |
R. Sinclair, Toyohiko J. Konno, D. Hong Ko |
| Keywords |
Diffusion Kinetics, High Resolution TEM, In Situ TEM, Metal-Semiconductor, Silicon Crystallization |
| Full Paper |
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